Durable Electronics Applications

Electronics built for harsh environment and space-based platforms operate where conventional semiconductors reach their limits fastest.

The Challenge

Even the wide-bandgap materials that dominate today’s high-reliability power and RF designs carry known vulnerabilities once they are in deployment.

In space and deep-earth-simulated conditions, current transistors have shown failure susceptibility, and current schottky diodes have exhibited catastrophic single-event burnout, with unacceptable leakage-current degradation. Add mass and thermal budgets that leave little room for oversized heat sinks or shielding, and the result is a persistent gap: platforms that need to survive years of radiation exposure, thermal cycling, and sustained power density without the margin conventional materials assume

The Solution

Optimizing The Extremes with Diamond

Single-crystal CVD diamond addresses this gap at the material level rather than through added shielding or derating. Its 5.5 eV bandgap and carrier mobility near 4,000 cm²/V·s at room temperature pair with breakdown voltage above 10 MV/cm, hole mobility above 3,800 cm²/V·s, and thermal conductivity above 22 W/cm·K — properties that hold up under the mechanical and thermal stability demands of vacuum operation. On radiation tolerance specifically, diamond is considered a nearly ideal material for radiation detection and is radiation-hard up to several megagrays of photon and electron exposure, and up to 10^15 neutrons or high-energy protons per cm² — an order of survivability that puts it in a different category from the WBG materials described above. Diamond also offers greater inherent radiation hardness from the outset than power SiC and GaN devices, which have well-documented radiation-effect problems.

GLCT single-crystal diamond thermal products

  • Electronics Grade Epiwafer

    SKU: S-T-0A00-0000
    Dimension: Up to 10mm x 10mm
    Thickness: 0.5mm
    Single-crystal CVD
    Face Orientation: <100>
    Roughness: <9nm Ra

    *1-hour Technical Consultation included

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  • Electronics Grade Substrate

    SKU: S-T-0A00-0000
    Dimension: Up to 6mm x 6mm
    Thickness: 0.5-500um
    Single-crystal CVD
    Face Orientation: <100>
    Boron Concentration: 0.03 – 2800 ppm

    *1-hour Technical Consultation included

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  • Optical Grade Low-Strain Substrate

    SKU: S-T-0A00-0000
    Dimension: Up to 6mm x 6mm
    Thickness: 150-500 µm
    Single-crystal CVD
    Face Orientation: <100>
    Roughness: <9nm Ra
    Low-Strain Substrates

    *1-hour Technical Consultation included

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  • Intrinsic Quantum Grade Substrate

    SKU: S-T-0A00-0000
    Dimension: Up to 6mm x 6mm
    Thickness: 0.2 – 0.5mm
    Single-crystal CVD
    Face Orientation: <100>
    Roughness: <4nm Ra

    *1-hour Technical Consultation included

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Applications

Technologies

Radiation-hardened power switching

Satellite power buses and RF payloads need switching devices that don’t degrade under the cumulative dose and single-event environment described above.

Space radiation detectors

Low-nitrogen intrinsic diamond is the material of choice for particle and radiation detectors because trap density directly limits charge-collection efficiency and energy resolution.

Harsh-environment sensor packaging

Devices that cycle repeatedly between temperature extremes need a substrate whose internal strain won’t propagate into yield loss or delamination over the platform’s service life